EFFECTS OF METHYLARSINE HOMOLOGS (CH3)NASH3-N ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS

被引：18

作者：

LUM, RM

KLINGERT, JK

KISKER, DW

机构：

来源：

关键词：

D O I：

10.1063/1.343532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：652 / 655

页数：4

共 25 条

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[8] GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING THERMALLY PRECRACKED TRIMETHYL-ARSENIC
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