EFFECTS OF METHYLARSINE HOMOLOGS (CH3)NASH3-N ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS

被引：18

作者：

LUM, RM

KLINGERT, JK

KISKER, DW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：652 / 655

页数：4

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[11] AN EXAMINATION OF ORGANOMETALLIC THERMAL-STABILITY AND ITS RELEVANCE TO LOW-TEMPERATURE MOCVD GROWTH OF HGCDTE
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[12] CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
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[16] INVESTIGATION OF TRIETHYLARSENIC AS A REPLACEMENT FOR ARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS
LUM, RM
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1475 - 1477
[17] C-13 ISOTOPIC LABELING STUDIES OF GROWTH MECHANISMS IN THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 120 - 126
[18] COMPARISON OF ALTERNATE AS-SOURCES TO ARSINE IN THE MOCVD GROWTH OF GAAS
LUM, RM
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LAMONT, MG
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 89 (01) : 137 - 142
[19] INVESTIGATION OF CARBON INCORPORATION IN GAAS USING C-13-ENRICHED TRIMETHYLARSENIC AND (CH4)-C-13
LUM, RM
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 101 - 104
[20] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS
LUM, RM
KLINGERT, JK
LAMONT, MG
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 284 - 286