ANOMALOUS DIFFUSION OF ACCEPTORS IN INP

被引：5

作者：

GAUNEAU, M ^{[1
]}

CHAPLAIN, R ^{[1
]}

LHARIDON, H ^{[1
]}

SALVI, M ^{[1
]}

DUHAMEL, N ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN, F-92220 BAGNEUX, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80082-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：418 / 421

页数：4

共 14 条

[1] DEPTH PROFILES OF MANGANESE IMPLANTS IN INP AFTER ANNEALING [J].

CHAPLAIN, R ;

GAUNEAU, M ;

LHARIDON, H ;

RUPERT, A .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1803-1808

[2] VACANCY-ZN COMPLEXES IN INP STUDIED BY POSITRONS [J].

DLUBEK, G ;

BRUMMER, O ;

PLAZAOLA, F ;

HAUTOJARVI, P ;

NAUKKARINEN, K .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1136-1138

[3] SIMULATION OF ANOMALOUS BE DIFFUSION IN SEMI-INSULATING INP [J].

FARLEY, CW ;

STREETMAN, BG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :946-947

[4] DIFFUSION OF ZINC INTO ION-IMPLANTED IRON DOPED INDIUM-PHOSPHIDE [J].

FAVENNEC, PN ;

HENRY, L ;

SALVI, M ;

HUBER, AM ;

MORILLOT, G .

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[5] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].

FRANK, FC ;

TURNBULL, D .

PHYSICAL REVIEW, 1956, 104 (03) :617-618

[6] RESIDUAL SULFUR AND SILICON DOPING IN INP AND GAINAS [J].

GAUNEAU, M ;

CHAPLAIN, R ;

RUPERT, A ;

COQUILLE, R ;

TOUDIC, Y ;

GRANDPIERRE, G .

JOURNAL OF CRYSTAL GROWTH, 1986, 76 (01) :128-134

[7] FURTHER EVIDENCE OF CHROMIUM, MANGANESE, IRON, AND ZINC REDISTRIBUTION IN INDIUM-PHOSPHIDE AFTER ANNEALING [J].

GAUNEAU, M ;

CHAPLAIN, R ;

RUPERT, A ;

RAO, EVK ;

DUHAMEL, N .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1029-1035

[8] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[9] SI-IMPLANTED AND MG-IMPLANTED INP, GAINAS AND SHORT-TIME PROXIMITY CAP ANNEALING [J].

KONIG, U ;

HILGARTH, J ;

TIEMANN, HH .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) :311-327

[10] SIMS STUDIES OF SEMI-INSULATING INP AMORPHIZED BY MG AND SI [J].

OBERSTAR, JD ;

STREETMAN, BG ;

BAKER, JE ;

WILLIAMS, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1320-1325

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