SURFACE SCIENCE IN ELECTRONICS INDUSTRY

被引：3

作者：

ARTHUR, JR ^{[1
]}

机构：

[1] BELL TEL LABS INC,SOLID STATE ELECTR RES LAB,MURRAY HILL,NJ 07974

来源：

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1976年 / 6卷 / 04期

关键词：

D O I：

10.1080/10408437608243567

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：413 / 431

页数：19

共 140 条

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[4]

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[6]

APPELBAUM JA, 1976, CRIT REV SOLID STATE

[7] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[8] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[9] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[10] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

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