EVALUATION OF III-V GROWTH-H TECHNOLOGIES FOR OPTOELECTRONIC APPLICATIONS

被引：12

作者：

HEINECKE, H ^{[1
]}

VEUHOFF, E ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,W-8000 MUNICH,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(93)90334-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this review, the capabilities of molecular beam epitaxy (MBE), metalorganic vapour phase epitaxy (MOVPE) and metalorganic molecular beam epitaxy (MOMBE) or chemical beam epitaxy (CBE) for the growth of optoelectronic layered structures are evaluated. Both MBE and MOVPE are used in production of discrete devices and for future integration, MOMBE/CBE can play an increasing role due to unique features which include perfection in selective area epitaxy and environmental safety aspects. Moreover the combined multistage use of these growth technologies to generate new epitaxial device concepts offers very important potential. This is shown here by the example of a laser-amplifier/waveguide integration using MOVPE and MOMBE.

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页码：120 / 129

页数：10

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