UNIFIED MODEL FOR STRUCTURE TRANSITION AND ELECTRICAL-PROPERTIES OF INAS (001) SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：37

作者：

YAMAGUCHI, H

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期

关键词：

STM; GAAS; INAS; RECONSTRUCTION; PHASE TRANSITION; SURFACE STATE;

D O I：

10.1143/JJAP.33.L1423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal stability of the (2x4) structures on InAs and GaAs (001) surfaces is studied by using scanning tunneling microscopy with atomic resolution. Even just before the transition to a (4x2) structure, the annealed InAs surface has much lower density of kinks in the dimer vacancy rows than the annealed GaAs. This difference leads to a unified model that can explain both the 1st order phase transition and the peculiar electric properties of an InAs (001) surface.

引用

收藏

页码：L1423 / L1426

页数：4

相关论文

共 18 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[2] FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES [J].

BRILLSON, LJ ;

SLADE, ML ;

VITURRO, RE ;

KELLY, MK ;

TACHE, N ;

MARGARITONDO, G ;

WOODALL, JM ;

KIRCHNER, PD ;

PETTIT, GD ;

WRIGHT, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :919-923

[3] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837

[4] ORIENTATION-DEPENDENT CHEMISTRY AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS INTERFACES [J].

CHANG, S ;

BRILLSON, LJ ;

KIME, YJ ;

RIOUX, DS ;

KIRCHNER, PD ;

PETTIT, GD ;

WOODALL, JM .

PHYSICAL REVIEW LETTERS, 1990, 64 (21) :2551-2554

[5] STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES [J].

FALTA, J ;

TROMP, RM ;

COPEL, M ;

PETTIT, GD ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1992, 69 (21) :3068-3071

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY [J].

FARRELL, HH ;

PALMSTROM, CJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :903-907

[7] ENERGETICS OF GAAS(100)-(2X4) AND GAAS(100)-(4X2) RECONSTRUCTIONS [J].

NORTHRUP, JE ;

FROYEN, S .

PHYSICAL REVIEW LETTERS, 1993, 71 (14) :2276-2279

[8] ENERGETICS OF ARSENIC DIMERS ON GAAS(001) AS-RICH SURFACES [J].

OHNO, T .

PHYSICAL REVIEW LETTERS, 1993, 70 (05) :631-634

[9] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179

[10] COMPENSATING SURFACE-DEFECTS INDUCED BY SI DOPING OF GAAS [J].

PASHLEY, MD ;

HABERERN, KW .

PHYSICAL REVIEW LETTERS, 1991, 67 (19) :2697-2700