SCHOTTKY BARRIERS WITHOUT MIDGAP STATES

被引：16

作者：

HARRISON, WA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 37卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.37.312

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：312 / 313

页数：2

共 12 条

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[7] SURFACE RECONSTRUCTION ON SEMICONDUCTORS
HARRISON, WA
[J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19
[8] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
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[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[9] ENERGY-BANDS OF RECONSTRUCTED SURFACE STATES OF CLEAVED SI
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[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1450 - 1453
[10] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS
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MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (21) : 1471 - 1475

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