A STUDY OF 2 MEV OXYGEN IMPLANTATION TO FORM DEEPLY BURIED SIO2 LAYERS

被引:12
作者
GROB, JJ [1 ]
GROB, A [1 ]
THEVENIN, P [1 ]
SIFFERT, P [1 ]
DANTERROCHES, C [1 ]
GOLANSKI, A [1 ]
机构
[1] CTR NATL ETUDES TELECOMMUNICAT,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1557/JMR.1989.1227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1227 / 1232
页数:6
相关论文
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