INFLUENCE OF THE DONOR DEPTH ON THE DETERMINATION OF THE BAND DISCONTINUITY OF ISOTYPE HETEROJUNCTIONS BY THE CAPACITANCE-VOLTAGE TECHNIQUE

被引：13

作者：

THOOFT, GW

COLAK, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 22期

关键词：

D O I：

10.1063/1.96856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1525 / 1527

页数：3

共 11 条

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[6] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

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APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[7] THEORETICAL AND EXPERIMENTAL CAPACITANCE-VOLTAGE BEHAVIOR OF AL0.3GA0.7AS GAAS MODULATION-DOPED HETEROJUNCTIONS - RELATION OF CONDUCTION-BAND DISCONTINUITY TO DONOR ENERGY [J].

NORRIS, GB ;

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MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :423-425

[8] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS [J].

OKUMURA, H ;

MISAWA, S ;

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APPLIED PHYSICS LETTERS, 1985, 46 (04) :377-379

[9] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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[10] BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE [J].

WATANABE, MO ;

YOSHIDA, J ;

MASHITA, M ;

NAKANISI, T ;

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5340-5344

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