MULTIION SCREENING IN UNCOMPENSATED SEMICONDUCTORS

被引：8

作者：

MEYER, JR

BARTOLI, FJ

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.57.2568

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2568 / 2571

页数：4

共 13 条

[1] ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON
CHAPMAN, PW
TUFTE, ON
ZOOK, JD
LONG, D
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3291 - &
[2] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS
CHATTOPADHYAY, D
QUEISSER, HJ
[J]. REVIEWS OF MODERN PHYSICS, 1981, 53 (04) : 745 - 768
[3] DINGLE RB, 1955, PHILOS MAG, V46, P831
[4] ELECTRONIC-STRUCTURE OF HYDROGEN IN SIMPLE METALS
JENA, P
SINGWI, KS
[J]. PHYSICAL REVIEW B, 1978, 17 (09): : 3518 - 3524
[5] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS
KOHN, W
SHAM, LJ
[J]. PHYSICAL REVIEW, 1965, 140 (4A): : 1133 - &
[6] RESISTIVITY OF N-TYPE DEGENERATELY DOPED SILICON AT LOW-TEMPERATURE - DIELECTRIC-SCREENING EFFECTS
KRIEGER, JB
GRUENEBAUM, J
MEEKS, T
[J]. PHYSICAL REVIEW B, 1974, 9 (08) : 3627 - 3629
[7] IONIZED-IMPURITY SCATTERING IN THE WEAK-SCREENING LIMIT
MEYER, JR
BARTOLI, FJ
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2353 - 2359
[8] PHASE-SHIFT CALCULATION OF ELECTRON-MOBILITY IN N-TYPE SILICON AT LOW-TEMPERATURES
MEYER, JR
BARTOLI, FJ
[J]. PHYSICAL REVIEW B, 1981, 24 (04): : 2089 - 2100
[9] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS
MEYER, JR
BARTOLI, FJ
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5413 - 5427
[10] METAL-INSULATOR-TRANSITION IN A DOPED SEMICONDUCTOR
ROSENBAUM, TF
MILLIGAN, RF
PAALANEN, MA
THOMAS, GA
BHATT, RN
LIN, W
[J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7509 - 7523