AL/POLY SI SPECIFIC CONTACT RESISTIVITY

被引：6

作者：

FORD, JM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：255 / 257

页数：3

相关论文

共 17 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON [J].

CARD, HC .

SOLID STATE COMMUNICATIONS, 1975, 16 (01) :87-89

[3] ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].

CARD, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544

[4] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[5]

CHEN JY, 1981, 4TH P INT S MAT TECH, P694

[6] LATERAL DIFFUSION OF BORON IN POLYCRYSTALLINE SILICON AND ITS INFLUENCE ON FABRICATION OF SUB-MICRON MOSTS [J].

COE, DJ .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :985-992

[7] GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

DELANNAY, F ;

LOBET, M ;

TEMERSON, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2009-2014

[8] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[9] ALUMINUM-SILICON OHMIC CONTACT ON SHALLOW N+-P JUNCTIONS [J].

FINETTI, M ;

OSTOJA, P ;

SOLMI, S ;

SONCINI, G .

SOLID-STATE ELECTRONICS, 1980, 23 (03) :255-&

[10] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

MANDURAH, MM ;

SARASWAT, KC ;

HELMS, CR ;

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763