VERY LONG CURRENT TRANSIENTS IN REVERSE-BIASED ALMOST IDEAL N+-P JUNCTIONS

被引：10

作者：

BASSO, G

PELLEGRINI, B

POLIGNANO, ML

SALETTI, R

TERRENI, P

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY

[2] CNR,CTR STUDI METODI & DISPOS RADIOTRASMISS,I-56100 PISA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 01期

关键词：

D O I：

10.1109/55.31674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：36 / 38

页数：3

共 7 条

[1] CURRENT STATUS OF THE 800X800 CHARGE-COUPLED-DEVICE IMAGE SENSOR [J].

BLOUKE, MM ;

JANESICK, JR ;

ELLIOTT, T ;

HALL, JE ;

COWENS, MW ;

MAY, PJ .

OPTICAL ENGINEERING, 1987, 26 (09) :864-874

[2] CURRENT TRANSIENT SPECTROSCOPY - A HIGH-SENSITIVITY DLTS SYSTEM [J].

BORSUK, JA ;

SWANSON, RM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) :2217-2225

[3] MECHANISM OF NON-SHOCKLEY CONDUCTION IN ALMOST IDEAL SILICON JUNCTION DIODES [J].

CEROFOLINI, GF ;

POLIGNANO, ML .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3823-3830

[4] A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION [J].

CEROFOLINI, GF ;

POLIGNANO, ML .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :579-585

[5] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[6]

SCHRODER DK, 1970, SOLID STATE ELECTRON, V13, P517

[7] QUENCHED-IN CENTERS IN SILICON P+N JUNCTIONS [J].

YAU, LD ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :193-201

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