ATOMIC LAYER EPITAXY OF GERMANIUM

被引：19

作者：

SUGAHARA, S

KITAMURA, T

IMAI, S

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, O-okayma

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90245-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Novel atomic layer epitaxy (ALE) methods have been proposed for Ge, where the elemental kinetics of the chemical vapor deposition method are divided into two sequential phases, i.e., a monolayer adsorption phase and a subsequent desorption phase for the surface-terminating species. Ge-ALE has been achieved, for the first time, with an ideal growth rate of one monolayer per cycle, under constant substrate temperature conditions. The detailed ALE method and growth characteristics have been presented. Furthermore, atomic hydrogen exposure is shown to be effective for widening the Ge-ALE window.

引用

收藏

页码：380 / 386

页数：7

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