CONDUCTION MECHANISM IN SILICON-NITRIDE FILMS

[1] POOLE-FRENKEL CONDUCTION AND NEUTRAL TRAP [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1399 - 1400

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[5] SPACE-CHARGE EFFECTS ON EMISSION-LIMITED CURRENT FLOW IN INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 832 - &

[6] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[7] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 489 - 495

[8] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[9] DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 221 - 227

[10] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284

[1] POOLE-FRENKEL CONDUCTION AND NEUTRAL TRAP [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1399 - 1400

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[5] SPACE-CHARGE EFFECTS ON EMISSION-LIMITED CURRENT FLOW IN INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 832 - &

[6] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[7] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 489 - 495

[8] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J]. APPLIED PHYSICS LETTERS, 1967, 10 (03) : 97 - &

[9] DISCHARGE OF MNOS STRUCTURES AT ELEVATED-TEMPERATURES [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 221 - 227

[10] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284