DEGRADATION OF 1.3-MUM INP INGAASP LIGHT-EMITTING-DIODES WITH MISFIT DISLOCATIONS

[1] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557

[2] EVALUATION OF DEFECTS IN CDTE USING A SIMPLE CATHODOLUMINESCENCE TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 369 - 374

[3] CHIN AK, UNPUB IEEE T ELECTRO

[4] OBSERVATION OF DARK DEFECTS RELATED TO DEGRADATION IN INGAASP-INP DH LASERS UNDER ACCELERATED OPERATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L87 - L90

[5] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 80 - 84

[6] KIMERLING LC, 1974, I PHYS C SER, V23, P589

[7] McMullin P. G., 1976, Scanning Electron Microscopy 1976. I, P543

[8] MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INGAASP-INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 287 - 292

[9] DEGRADED INGAASP/INP DOUBLE HETEROSTRUCTURE LASER OBSERVATION WITH ELECTRON-PROBE MICROANALYZER [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 115 - 117

[10] RELIABILITY OF HIGH RADIANCE INGAASP-INP LEDS OPERATING IN THE 1.2-1.3 MU-M WAVELENGTH [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 167 - 173

[1] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557

[2] EVALUATION OF DEFECTS IN CDTE USING A SIMPLE CATHODOLUMINESCENCE TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 369 - 374

[3] CHIN AK, UNPUB IEEE T ELECTRO

[4] OBSERVATION OF DARK DEFECTS RELATED TO DEGRADATION IN INGAASP-INP DH LASERS UNDER ACCELERATED OPERATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L87 - L90

[5] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) : 80 - 84

[6] KIMERLING LC, 1974, I PHYS C SER, V23, P589

[7] McMullin P. G., 1976, Scanning Electron Microscopy 1976. I, P543

[8] MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INGAASP-INP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 287 - 292

[9] DEGRADED INGAASP/INP DOUBLE HETEROSTRUCTURE LASER OBSERVATION WITH ELECTRON-PROBE MICROANALYZER [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 115 - 117

[10] RELIABILITY OF HIGH RADIANCE INGAASP-INP LEDS OPERATING IN THE 1.2-1.3 MU-M WAVELENGTH [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 167 - 173