EFFECT OF DISLOCATIONS IN GA1-XALXAS-SI LIGHT-EMITTING-DIODES

被引：41

作者：

ROEDEL, RJ ^{[1
]}

VONNEIDA, AR ^{[1
]}

CARUSO, R ^{[1
]}

DAWSON, LR ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 04期

关键词：

dislocations; light-emitting diodes; quantum efficiency;

D O I：

10.1149/1.2129100

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dislocations in Ga1-xAlxAsiSi LED's were studied and found to have a pronounced effect upon the external quantum efficiency of the diodes. A simple theoretical model, based on the postulation that the dislocations act as effective nonradiative recombination centers, is proposed to explain the experimental results. It is observed that the dislocation configuration in the epitaxial layers copies that of the GaAs substrate wafers, and that screening substrate wafers is extremely useful in the consistent fabrication of high efficiency LED's. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：637 / 641

页数：5

共 20 条

[11] ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH [J].