ON THE IMPROVEMENT OF GATE VOLTAGE SWINGS IN DELTA-DOPED GAAS/INXGA1-XAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES

被引：17

作者：

HSU, WC

SHIEH, HM

KAO, MJ

HSU, RT

WU, YH

机构：

[1] Department of Electrical Engineering, National Cheng-Kung University, Tianan, ROC

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 09期

关键词：

D O I：

10.1109/16.231568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant improvements on gate voltage swings in delta-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. Structure utilizing a compositionally graded InxGa1-xAs channel revealed a very flat transconductance region of 2 V. While the gate voltage swings of single and double delta-doped GaAs/In0.25Ga0.75As/GaAs structures were 2.5 and 2.8 V, respectively. All structures in this work also exhibited high extrinsic transconductances as well as high saturation current densities.

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收藏

页码：1630 / 1635

页数：6

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