CONTROL OF SELECTIVE AREA GROWTH OF INP

被引：55

作者：

KAYSER, O

WESTPHALEN, R

OPITZ, B

BALK, P

机构：

[1] Institute of Semiconductor Electronics, Technical University Aachen

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 112卷 / 01期

关键词：

D O I：

10.1016/0022-0248(91)90916-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective growth of InP by low pressure metalorganic vapor phase epitaxy (LP MOVPE) on (100) InP substrates was studied using SiO2 masks. The role of the mask geometry on the shape of the selectively grown structures was investigated. The rate and the cross section of the patterns depends on deposition temperature, V/III ratio, growth velocity and total pressure. The experimental findings can be explained by a simple model assuming orientation dependent growth rates and surface migration. Hall data (mu-77 = 65,000 cm2/V.s) show the excellent material quality of the selectively grown structures.

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收藏

页码：111 / 122

页数：12

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