DOPANT PATTERNING OF MBE GAAS DURING GROWTH BY VERY LOW-ENERGY FOCUSED TIN ION-BEAM DEPOSITION

被引：12

作者：

THOMPSON, JH ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

LINFIELD, EH ^{[1
]}

FROST, JEF ^{[1
]}

CHURCHILL, AC ^{[1
]}

SMITH, GW ^{[1
]}

LEE, D ^{[1
]}

HOULTON, M ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

机构：

[1] DRA,DIV ELECTR,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91091-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For the first time a focussed ion beam has been used to successfully dope MBE GaAs during growth. GaAs with a mobility of 73 000 cm2 V-1 s-1 at a carrier concentration of 1 x 10(14) cm-3 has been attained which is the highest mobility MBE GaAs achieved by the technique of ionised beam doping. The use of a tin focussed ion beam as an MBE dopant source has also allowed the three-dimensional patterning of the dopant concentration in GaAs, for the first time. The focussed ion beam apparatus did not interfere with or affect the conventional MBE growth of GaAs and AlGaAs in the chamber.

引用

页码：69 / 73

页数：5

共 8 条

[1] SN ION DOPING DURING GAAS MBE WITH FIELD-ION GUN [J].

BAMBA, Y ;

MIYAUCHI, E ;

KURAMOTO, K ;

TAKAMORI, A ;

FURUYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06) :L331-L332

[2] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE [J].

BEAN, JC ;

DINGLE, R .

APPLIED PHYSICS LETTERS, 1979, 35 (12) :925-927

[3] LOW-ENERGY ION DOPING OF GAAS [J].

CAVALIERI, S ;

GAUCHEREL, P ;

MONNOM, G ;

PAPARODITIS, C ;

ROUSTAN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1421-1424

[4] DEFECT STUDY IN GAAS BOMBARDED BY LOW-ENERGY FOCUSED ION-BEAMS [J].

GAMO, K ;

MIYAKE, H ;

YUBA, Y ;

NAMBA, S ;

KASAHARA, H ;

SAWARAGI, H ;

AIHARA, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2124-2127

[5]

JSUDRAUD P, COMMUNICATION

[6] A 0-30 KEV LOW-ENERGY FOCUSED ION-BEAM SYSTEM [J].

KASAHARA, H ;

SAWARAGI, H ;

AIHARA, R ;

GAMO, K ;

NAMBA, S ;

SHEARER, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :974-976

[7] IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS [J].

MANNOH, M ;

NOMURA, Y ;

SHINOZAKI, K ;

MIHARA, M ;

ISHII, M .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1092-1095

[8] A VARIABLE ENERGY FOCUSED ION-BEAM SYSTEM FOR INSITU MICROFABRICATION [J].

NARUM, DH ;

PEASE, RFW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :966-973

← 1 →