SN ION DOPING DURING GAAS MBE WITH FIELD-ION GUN

被引：11

作者：

BAMBA, Y

MIYAUCHI, E

KURAMOTO, K

TAKAMORI, A

FURUYA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 06期

关键词：

D O I：

10.1143/JJAP.22.L331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting gallium arsenide

引用

页码：L331 / L332

页数：2

共 11 条

[1] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE [J].

BEAN, JC ;

DINGLE, R .

APPLIED PHYSICS LETTERS, 1979, 35 (12) :925-927

[2]

COVINGTON DW, I PHYS C SER, V45, P171

[3]

EISEN FH, 1975, 4TH P INT C ION IMPL, P3

[4] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

MATSUNAGA, N ;

SUZUKI, T ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5710-5713

[5] NITROGEN DOPING INTO GAAS1-XPX USING IONIZED BEAM IN MOLECULAR-BEAM EPITAXY [J].

MATSUSHIMA, Y ;

GONDA, SI ;

MAKITA, Y ;

MUKAI, S .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (03) :281-286

[6] IONIZED ZN DOPING OF GAAS MOLECULAR-BEAM EPITAXIAL-FILMS [J].

NAGANUMA, M ;

TAKAHASHI, K .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :342-344

[7] RAMAN-SPECTRA FROM SI AND SN IMPLANTED GAAS [J].

NAKAMURA, T ;

KATODA, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5870-5872

[8] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J].

OTA, Y .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1102-1110

[9] SYSTEM GA-AS-SN - INCORPORATION OF SN INTO GAAS [J].

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2659-2666

[10] SILICON MOLECULAR-BEAM EPITAXY WITH ANTIMONY ION DOPING [J].

SUGIURA, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2630-2633

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