LOW-ENERGY ION DOPING OF GAAS

被引:7
作者
CAVALIERI, S
GAUCHEREL, P
MONNOM, G
PAPARODITIS, C
ROUSTAN, JC
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.574612
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1421 / 1424
页数:4
相关论文
共 18 条
[1]   THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDREWS, DA ;
HECKINGBOTTOM, R ;
DAVIES, GJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425
[2]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[3]   ON THE POSSIBILITY OF MBE GROWTH INTERFACE MODIFICATION BY HYDROGEN [J].
BACHRACH, RZ ;
BRINGANS, RD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :142-145
[4]  
BAMBA Y, 1983, JPN J APPL PHYS, V22, P331
[5]   LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE [J].
BEAN, JC ;
DINGLE, R .
APPLIED PHYSICS LETTERS, 1979, 35 (12) :925-927
[6]   HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) [J].
BRIONES, F ;
GOLMAYO, D ;
GONZALEZ, L ;
DEMIGUEL, JL .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (03) :147-151
[7]   EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022
[8]   P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].
CHO, AY ;
HAYASHI, I .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&
[9]  
Cornu A, 1975, COMPILATION MASS SPE
[10]   ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
ANDREWS, DA ;
HECKINGBOTTOM, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7214-7218