LOW-ENERGY ION DOPING OF GAAS

被引：7

作者：

CAVALIERI, S

GAUCHEREL, P

MONNOM, G

PAPARODITIS, C

ROUSTAN, JC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574612

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1421 / 1424

页数：4

共 18 条

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[13] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

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[15] IMPROVED P-N-JUNCTIONS IN GE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS, 1979, 18 (04) :353-356

[16]

VANDERPAUW LJ, 1959, PHILIPS RES REP, V13, P1

[17] ELECTRON-MOBILITY IN N-TYPE GAAS AT 77-K - DETERMINATION OF THE COMPENSATION RATIO [J].

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[18] SURFACE EXCHANGE DOPING OF MBE GAAS FROM S AND SE CAPTIVE SOURCES [J].

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