POLYCRYSTALLINE SI THIN-FILM TRANSISTORS USING THERMALLY CRYSTALLIZED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION A-SI FILMS FOR THE CHANNEL LAYER AND P-DOPED MICROCRYSTALLINE SI FILMS FOR THE SOURCE AND DRAIN LAYERS

被引：9

作者：

KOBAYASHI, K ^{[1
]}

NIJS, J ^{[1
]}

MERTENS, R ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3030 LEUVEN,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2541 / 2546

页数：6

共 16 条

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