OPTICAL AND STRUCTURAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS ON SAPPHIRE

被引：3

作者：

CHIN, A

BHATTACHARYA, P

CHANG, KH

BISWAS, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 288

页数：6

共 8 条

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[7] MICROWAVE MESFETS FABRICATED IN GAAS-LAYERS GROWN ON SOS SUBSTRATES [J].

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