OPTICAL STUDY OF ISOTOPIC EFFECTS IN THE SULFUR DEEP LEVEL IN SILICON

被引：5

作者：

FORMAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.92085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：776 / 778

页数：3

共 27 条

[1] NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].

BARON, R ;

BAUKUS, JP ;

ALLEN, SD ;

MCGILL, TC ;

YOUNG, MH ;

KIMURA, H ;

WINSTON, HV ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :257-259

[2] NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].

BARON, R ;

YOUNG, MH ;

NEELAND, JK ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :594-596

[3] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[4] SULFUR IN SILICON [J].

CARLSON, RO ;

HALL, RN ;

PELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :81-83

[5] OPTICAL-PROPERTIES OF SULFUR-DOPED SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4090-4097

[6] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J].

FAHRNER, W ;

GOETZBERGER, A .

APPLIED PHYSICS LETTERS, 1972, 21 (07) :329-+

[7]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[8]

Frenkel J., 1938, TECH PHYS USSR, V5, P685

[9] EVEN-PARITY LEVELS OF DONORS IN SI [J].

KLEINER, WH ;

KRAG, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (21) :1490-&

[10] ENERGY-LEVELS AND DEFECT SIGNATURE OF SULFUR-IMPLANTED SILICON BY THERMALLY STIMULATED MEASUREMENTS [J].

KOYAMA, RY ;

PHILLIPS, WE ;

MYERS, DR ;

LIU, YM ;

DIETRICH, HB .

SOLID-STATE ELECTRONICS, 1978, 21 (07) :953-955

← 1 2 3 →