TEM OBSERVATIONS OF INITIAL CRYSTALLIZATION STATES FOR LPCVD SI FILMS

被引:13
作者
ADACHI, E
AOYAMA, T
KONISHI, N
SUZUKI, T
OKAJIMA, Y
MIYATA, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期
关键词
D O I
10.1143/JJAP.27.L1809
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L1809 / L1811
页数:3
相关论文
共 8 条
[1]   SOLID-PHASE CRYSTALLIZATION KINETICS IN DOPED ALPHA-SI CHEMICAL-VAPOR-DEPOSITION FILMS [J].
BISARO, R ;
MAGARINO, J ;
ZELLAMA, K ;
SQUELARD, S ;
GERMAIN, P ;
MORHANGE, JF .
PHYSICAL REVIEW B, 1985, 31 (06) :3568-3575
[2]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[3]   GROWTH AND PHYSICAL-PROPERTIES OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].
HARBEKE, G ;
KRAUSBAUER, L ;
STEIGMEIER, EF ;
WIDMER, AE ;
KAPPERT, HF ;
NEUGEBAUER, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :675-682
[4]   DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].
HASEGAWA, S ;
KASAJIMA, T ;
SHIMIZU, T .
SOLID STATE COMMUNICATIONS, 1979, 29 (01) :13-16
[5]   HIGH-PERFORMANCE THIN-FILM TRANSISTORS IN LOW-TEMPERATURE CRYSTALLIZED LPCVD AMORPHOUS-SILICON FILMS [J].
HATALIS, MK ;
GREVE, DW .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :361-364
[6]   LOW-TEMPERATURE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON FILMS IN CONTACT WITH EVAPORATED ALUMINUM ELECTRODES [J].
ISHIHARA, S ;
KITAGAWA, M ;
HIRAO, T .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :837-840
[7]   STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].
KAMINS, TI ;
MANDURAH, MM ;
SARASWAT, KC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :927-932
[8]   THE EFFECT OF FILM THICKNESS ON THE ELECTRICAL-PROPERTIES OF LPCVD POLYSILICON FILMS [J].
LU, NCC ;
LU, CY ;
LEE, MK ;
SHIH, CC ;
WANG, CS ;
REUTER, W ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :897-902