SURFACTANTS IN SI(111) HOMOEPITAXY

被引：29

作者：

HORNVONHOEGEN, M

FALTA, J

COPEL, M

TROMP, RM

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si epitaxy is strongly affected by the presence of an adsorbate (surfactant). We have examined both film quality and dopant incorporation in homoepitaxy for Sb, As, and Ga terminated Si(111). The efficency of site exchange between Si and adsorbate depends sensitively on binding energy and binding geometry of the adsorbate. For a weakly bound adsorbate (Ga or Sb), there is no inhibition of epitaxy, but a strongly bound adsorbate (As) kinetically inhibits growth. © 1995 American Institute of Physics.

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页码：487 / 489

页数：3

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