AN ANALYTICAL AND EXPERIMENTAL INVESTIGATION OF THE CUTOFF FREQUENCY FT OF HIGH-SPEED BIPOLAR-TRANSISTORS

被引:12
作者
NANBA, M
SHIBA, T
NAKAMURA, T
TOYABE, T
机构
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
关键词
TRANSISTORS; -; Analysis;
D O I
10.1109/16.3360
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of vertical and lateral structures on cutoff frequency and breakdown voltage are investigated for high-speed bipolar transistors. The cutoff frequencies are examined in the range from 2. 5 to 80 GHz by analysis and from 3 to 20 GHz by experiment. To attain the maximum cutoff frequency, it is predicted that the collector width, the base width, and the collector concentration should be 0. 12 mu m, 0. 07 mu m, and 1. 2 multiplied by 10**1**6 cm**-**3, respectively, and that in this scaled transistor, breakdown voltages should be reduced below 3 and 7. 7.
引用
收藏
页码:1021 / 1028
页数:8
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