EVALUATION OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTOR-DEVICES BY THE METHOD OF MOMENTS

被引：5

作者：

CAVALLINI, A

FRABONI, B

CAVALCOLI, D

机构：

[1] Department of Physics, University of Bologna, I-40126 Bologna

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 12期

关键词：

D O I：

10.1063/1.350447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments," due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices.

引用

页码：5964 / 5968

页数：5

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