INVESTIGATIONS ON UNSATURATED OPTICAL GAIN SPECTRA OF GAAS-GAA1AS-DHS LASERS AT ABOVE THRESHOLD CONDITIONS

被引:15
作者
HILDEBRAND, O
GOBEL, E
LOHNERT, K
机构
来源
APPLIED PHYSICS | 1978年 / 15卷 / 02期
关键词
D O I
10.1007/BF00928199
中图分类号
O59 [应用物理学];
学科分类号
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页码:149 / 152
页数:4
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共 17 条
[11]  
HILDEBRAND O, 1976, 13TH P INT C PHYS SE, P942
[12]   THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].
KANE, EO .
PHYSICAL REVIEW, 1963, 131 (01) :79-&
[13]   SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].
LASHER, G ;
STERN, F .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&
[14]   VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES [J].
NANNICHI, Y .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3009-&
[15]   EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].
PILKUHN, M ;
RUPPRECHT, H ;
BLUM, S .
SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909
[16]  
Shaklee K. L., 1973, Journal of Luminescence, V7, P284, DOI 10.1016/0022-2313(73)90072-0
[17]   INFLUENCE OF REFLECTIVITY ON EXTERNAL QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J].
ULBRICH, R ;
PILKUHN, MH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) :314-&