PROPERTIES OF AL2O3 FILMS DEPOSITED FROM ALCL3, CO2, AND H-2 SYSTEM

被引：38

作者：

SILVESTRI, VJ

OSBURN, CM

ORMOND, DW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 06期

关键词：

D O I：

10.1149/1.2131588

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：902 / 907

页数：6

共 21 条

[11] MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].

MCCRACKIN, FL ;

PASSAGLIA, E ;

STROMBERG, RR ;

STEINBERG, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+

[12] CHANNELING-EFFECT ANALYSIS OF THIN FILMS ON SILICON - ALUMINUM OXIDE [J].

MITCHELL, IV ;

KAMOSHIDA, M ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4378-+

[13] VAPOR-PHASE GROWTH OF ALPHA ALUMINA SINGLE CRYSTALS [J].

SCHAFFER, PS .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1965, 48 (10) :508-&

[14] CHEMICAL VAPOR-DEPOSITION OF ALXOYNZ FILMS [J].

SILVESTRI, VJ ;

IRENE, EA ;

ZIRINSKY, S ;

KUPTSIS, JD .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :429-444

[15] SUCCESSIVE GROWTH OF SI AND SIO2 IN EPITAXIAL APPARATUS [J].

STEINMAIER, W ;

BLOEM, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :206-209

[16]

TORKAR K, 1960, MONATSH CHEM, V91, P659

[17] PROPERTIES OF ALUMINUM OXIDE OBTAINED BY HYDROLYSIS OF AICI3 [J].

TSUJIDE, T ;

NAKANUMA, S ;

IKUSHIMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :703-+

[18]

TUNG SK, 1965, T METALL SOC AIME, V233, P572

[19]

TUNG SK, 1967, J ELECTROCHEM SOC, V114, pC275

[20]

ZIRINSKY S, COMMUNICATION

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