A GROOVE GAINASP LASER ON SEMI-INSULATING INP USING A LATERALLY DIFFUSED JUNCTION

被引：7

作者：

YU, KL

KOREN, U

CHEN, TR

YARIV, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 05期

关键词：

D O I：

10.1109/JQE.1982.1071620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：817 / 819

页数：3

相关论文

共 6 条

[1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP [J].

ANDO, H ;

SUSA, N ;

KANBE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :L197-L200

[2] OXIDE DEFINED TJS']JS LASERS IN INGAASP-INP DH-STRUCTURES [J].

BULL, DJ ;

PATEL, NB ;

PRINCE, FC ;

NANNICHI, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :710-713

[3] GAAS-GAALAS HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATES [J].

LEE, CP ;

MARGALIT, S ;

YARIV, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1250-1256

[4] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :410-412

[5]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[6] GROOVE GAINASP LASER ON SEMI-INSULATING INP [J].

YU, KL ;

KOREN, U ;

CHEN, TR ;

CHEN, PC ;

YARIV, A .

ELECTRONICS LETTERS, 1981, 17 (21) :790-792