FABRICATION OF SILICON NANOSTRUCTURES WITH ELECTRON-BEAM LITHOGRAPHY USING AIN AS A DRY-ETCH DURABLE RESIST

被引：9

作者：

TADA, T ^{[1
]}

KANAYAMA, T ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radio-frequency-sputtered AlN acts as a negative type electron- and ion-beam resist with high-resolution and high dry-etch durability. Fine structures of silicon (30-50 nm wide) with high-aspect ratio ( > 10) have been fabricated using the AlN resist with electron-beam lithography and succeeding low-temperature dry etching with SF6 at -130-degrees-C. They were thermally oxidized at 800-degrees-C to reduce the size further. Structures less than 20 nm have been obtained.

引用

页码：2229 / 2232

页数：4

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