WAVELENGTH-MODULATED PHOTOCAPACITANCE SPECTROSCOPY

被引：7

作者：

KAMIENIECKI, E

LAGOWSKI, J

GATOS, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.327762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1863 / 1865

页数：3

共 13 条

[1] DETERMINATION OF SURFACE-STATE PARAMETERS FROM SURFACE PHOTOVOLTAGE TRANSIENTS [J].

BALESTRA, CL ;

LAGOWSKI, J ;

GATOS, HC .

SURFACE SCIENCE, 1977, 64 (02) :457-464

[2] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376

[3] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[4] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

HUBER, AM ;

LINH, NT ;

VALLADON, M ;

DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[5] LOW-TEMPERATURE PHOTOCAPACITY MEASUREMENT IN MOS STRUCTURE [J].

KAMIENIECKI, E .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1487-1493

[6] DERIVATIVE SURFACE PHOTO-VOLTAGE SPECTROSCOPY - NEW APPROACH TO THE STUDY OF ABSORPTION IN SEMICONDUCTORS - GAAS [J].

LAGOWSKI, J ;

WALUKIEWICZ, W ;

SLUSARCZUK, MMG ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5059-5061

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8]

LIN AL, 1976, J APPL PHYS, V47, P1859, DOI 10.1063/1.322905

[9]

METZ S, 1977, I PHYS C SER A, V33, P66

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

← 1 2 →