DLTS MEASUREMENT ON AU-DOPED SI P+N JUNCTIONS AND ITS COMPUTER-SIMULATION

被引：9

作者：

TOKUMARU, Y

OKUSHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.2441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2441 / 2449

页数：9

共 10 条

[1] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[2] DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J].

DAY, DS ;

TSAI, MY ;

STREETMAN, BG ;

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5093-5098

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[5]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P12

[6] FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON [J].

NAGASAWA, K ;

SCHULZ, M .

APPLIED PHYSICS, 1975, 8 (01) :35-42

[7]

RALF HI, 1978, J APPL PHYS, V49, P672

[8] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

SAH, CT ;

FORBES, L ;

ROSIER, LL ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+

[10] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J].

TASCH, AF ;

SAH, CT .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :800-&

← 1 →