ENHANCED BLUE-LIGHT EMISSION FROM AN INDIUM-TREATED POROUS SILICON DEVICE

被引：34

作者：

STEINER, P ^{[1
]}

KOZLOWSKI, F ^{[1
]}

WIELUNSKI, M ^{[1
]}

LANG, W ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,DYNAMITRON TANDEM LAB,D-44780 BOCHUM,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 11期

关键词：

POROUS SILICON; ELECTROLUMINESCENCE; QUANTUM EFFICIENCY; LED; BLUE-LIGHT EMISSION; ELECTROPLATING; INDIUM;

D O I：

10.1143/JJAP.33.6075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the technology and the performance of blue light-emitting porous-silicon devices. The devices are fabricated using porous silicon formation with UV-light applied. Furthermore, indium is electroplated into the pores, causing an increase of the quantum efficiency. The blue electroluminescence exhibits a peak maximum around 480 nm and an external quantum efficiency of 0.5 x 10(-2)%. Rutherford backscattering spectroscopy (RES) Nas employed to measure the stoichiometry and the depth profile of indium in the porous layer.

引用

页码：6075 / 6077

页数：3

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