A STRUCTURAL AND ELECTRICAL COMPARISON OF THIN SIO2-FILMS GROWN ON SILICON BY PLASMA ANODIZATION AND RAPID THERMAL-PROCESSING TO FURNACE OXIDATION

被引：23

作者：

NELSON, SA

HALLEN, HD

BUHRMAN, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5027 / 5035

页数：9

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