150 MW FUNDAMENTAL-TRANSVERSE-MODE OPERATION OF 670 NM WINDOW LASER-DIODE

被引：35

作者：

ARIMOTO, S

YASUDA, M

SHIMA, A

KADOIWA, K

KAMIZATO, T

WATANABE, H

OMURA, E

AIGA, M

IKEDA, K

MITSUI, S

机构：

[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electronic Corporation, Itami, Hyogo, 664, 4-1, Mizuhara

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fundamental-transverse-mode high-power CW operation over 150 mW has been realized in AlGaInP/GaInP 670 nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film for the first time. A compressively strained double-quantum-well active layer and an MQB also have been employed for reduction of threshold current. Stable CW operation beyond 1500 h has been observed under 50 mW at 50-degrees-C. We believe that these results are the best characteristics ever reported in transverse-mode-stabilized visible laser diodes.

引用

页码：1874 / 1879

页数：6

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