PHYSICAL MECHANISMS OF CARRIER LEAKAGE IN DH INJECTION-LASERS

被引：22

作者：

WU, CM

YANG, ES

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 06期

关键词：

D O I：

10.1063/1.325302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3114 / 3117

页数：4

共 11 条

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[5]

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[7] GAAS LASERS WITH CONSISTENTLY LOW DEGRADATION RATES AT ROOM-TEMPERATURE [J].

GOODWIN, AR ;

PETERS, JR ;

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APPLIED PHYSICS LETTERS, 1977, 30 (02) :110-113

[8] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3533-3537

[9] HOW MUCH AL IN ALGAAS-GAAS LASER [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3887-3891

[10] GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].

STERN, F .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294

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