HIGH-TEMPERATURE CARRIER TRANSPORT IN N-TYPE EPITAXIAL GAAS

被引：32

作者：

NICHOLS, KH ^{[1
]}

YEE, CML ^{[1
]}

WOLFE, CM ^{[1
]}

机构：

[1] WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 02期

关键词：

D O I：

10.1016/0038-1101(80)90144-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 116

页数：8

共 47 条

[21] ELECTRON TRAPS IN N-GAAS REVEALED BY HIGH-TEMPERATURE HALL MEASUREMENTS [J].

IKOMA, H ;

WANG, SS .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :512-&

[22]

JASTRZEBSKI L, 1978, ELECTROCHEM SOC M SE, P551

[23] ELECTROPHYSICAL PROPERTIES OF NON-DOPED EPITAXIAL GAAS IN RANGE FROM 10 TO 1100 DEGREESK [J].

KHOKHLOV, VI ;

SIDOROV, YG ;

DVORETSKII, SA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :311-321

[24] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[25]

LINDOW A, 1978, J APPL PHYS, V49, P5213

[26] ENERGY OF SPECTRUM AND SCATTERING OF CURRENT CARRIERS IN GALLIUM ARSENIDE [J].

NASLEDOV, DN .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2140-&

[27]

ONTON A, 1972, 11TH P INT C PHYS SE, P1023

[28] TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP [J].

PANISH, MB ;

CASEY, HC .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :163-&

[29] HIGH TEMPERATURE HALL MEASUREMENTS ON GAAS [J].

ROBERTS, FE .

PHYSICS LETTERS, 1965, 17 (01) :21-&

[30] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].

RODE, DL .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04) :1012-+

← 1 2 3 4 5 →