DEPOSITION AND CHARACTERIZATION OF DIAMOND EPITAXIAL THIN-FILMS ON SILICON SUBSTRATES

被引：55

作者：

JIANG, X ^{[1
]}

KLAGES, CP ^{[1
]}

ROSLER, M ^{[1
]}

ZACHAI, R ^{[1
]}

HARTWEG, M ^{[1
]}

FUSSER, HJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,MAT RES,D-89081 ULM,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 06期

关键词：

D O I：

10.1007/BF00331746

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial diamond growth has been attempted on mirror-polished monocrystalline (001), (111), and (110) silicon substrates by microwave plasma CVD. The surface morphology and the crystallographic properties of the films were characterized by means of Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray diffraction, and X-ray and Raman pole-figure analysis. The results demonstrate epitaxial growth of diamond on both (001) and (111) or-iented silicon substrates. Preliminary results give strong evidence for substrate-induced orientation of the diamond crystallites also on (110) oriented silicon substrate. The heteroepitaxy can be assigned to the oriented covalent bondifig across the interface between diamond and silicon.

引用

页码：483 / 489

页数：7

共 14 条

[1] DIAMOND ELECTRONIC DEVICES - A CRITICAL-APPRAISAL [J].