ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS

[31] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[32] DHeurle F. M., 1973, PHYS THIN FILMS, V7, P257

[33] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837

[34] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &

[35] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[36] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[37] HALL-EFFECT LEVELS IN AG-DOPED AND AU-DOPED P-TYPE GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01): : K39 - K41

[38] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[39] DYNAMICAL OBSERVATION OF ROOM-TEMPERATURE INTERFACIAL REACTION IN METAL-SEMICONDUCTOR SYSTEM BY AUGER-ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 706 - 710

[40] THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 993 - 996

[31] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &

[32] DHeurle F. M., 1973, PHYS THIN FILMS, V7, P257

[33] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837

[34] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &

[35] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[36] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[37] HALL-EFFECT LEVELS IN AG-DOPED AND AU-DOPED P-TYPE GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01): : K39 - K41

[38] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612

[39] DYNAMICAL OBSERVATION OF ROOM-TEMPERATURE INTERFACIAL REACTION IN METAL-SEMICONDUCTOR SYSTEM BY AUGER-ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1979, 86 (JUL) : 706 - 710

[40] THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 993 - 996