GROWTH AND CHARACTERIZATION OF PECVD SEMI-INSULATING POLYSILICON FILMS AND RESISTORS

Semi-insulating polycrystalline (SIPOS) films deposited by plasma-enhanced chemical vapor deposition (PECVD) were investigated. The films were deposited using monosiane, nitrous oxide and argon at 300° C in a parallel-plate plasma reactor. Rapid thermal annealing was shown to restructure and densify the films with an activation energy of 0.7 eV. Nitrogen was found to be incorporated into the as-deposited films but not in annealed films. It was found that the resistivity of PECVD SIPOS was less sensitive to temperature and an order of magnitude lower than the values reported for LPCVD SI-POS. The differences are thought to be due to the more amorphous nature of PECVD material because of the lower deposition temperature of 300° C. © 1990 The Mineral, Metal & Materials Society, Inc.