INFLUENCE OF BISMUTH AS A SURFACTANT ON THE GROWTH OF GERMANIUM ON SILICON

被引：19

作者：

KAWANO, A

KONOMI, I

AZUMA, H

HIOKI, T

NODA, S

机构：

[1] Toyota Central Research and Development Laboratories, Inc., Aichi-gun, Aichi-ken, 480-11, Nagakute-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a Bi surfactant layer on the growth of Ge on Si(100) substrates was investigated by using a medium-energy ion-backscattering spectrometer and a transmission electron microscope. A monolayer of Bi predeposited on the Si substrates suppressed islanding in the subsequent molecular-beam-epitaxial growth of Ge. The Bi atoms moved on top of the Ge film during the growth process.

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收藏

页码：4265 / 4267

页数：3

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