RELIABLE HIGH-POWER (40MW) OPERATION OF TRANSVERSE-MODE STABILIZED INGAAIP LASER-DIODES WITH STRAINED ACTIVE LAYER

被引:9
作者
NITTA, K
OKAJIMA, M
NISHIKAWA, Y
ITAYA, K
HATAKOSHI, G
机构
[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho
关键词
LASERS; SEMICONDUCTOR LASERS;
D O I
10.1049/el:19920677
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reliable high-power operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 angstrom) active layer. A strained In0.62Ga0.38P active layer and a 800-mu-m cavity length were employed to reduce the operation current density at high-power and high-temperature operation. A highly reliable operation for over 2000 h has been achieved with a 40 mW output at 40-degrees-C. The lifetime of the lasers was limited by the operation current density.
引用
收藏
页码:1069 / 1070
页数:2
相关论文
共 8 条
[1]  
ISHIKAWA M, 1987, 19TH C SOL STAT DEV, P115
[2]   HIGH-POWER OPERATION OF HETEROBARRIER BLOCKING STRUCTURE INGAAIP VISIBLE-LIGHT LASER-DIODES [J].
ITAYA, K ;
WATANABE, Y ;
ISHIKAWA, M ;
HATAKOSHI, G ;
UEMATSU, Y .
APPLIED PHYSICS LETTERS, 1990, 56 (18) :1718-1719
[3]   HIGHLY RELIABLE TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER-DIODES AT HIGH-POWER OPERATION [J].
ITAYA, K ;
ISHIKAWA, M ;
NITTA, K ;
OKAJIMA, M ;
HATAKOSHI, G .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A) :L590-L592
[4]  
ITAYA K, 1990, 22ND C SOL STAT DEV, P565
[5]   EFFECTS OF ZN ELECTRICAL-ACTIVITY ON BAND-GAP ENERGY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
NISHIKAWA, Y ;
ISHIKAWA, M ;
TSUBURAI, Y ;
KOKUBUN, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L2092-L2094
[6]   HIGH-TEMPERATURE OPERATION OF HIGH-POWER INGAALP VISIBLE-LIGHT LASER-DIODES WITH AN IN0.5+DELTA-GA0.5-DELTA-P ACTIVE LAYER [J].
NITTA, K ;
ITAYA, K ;
NISHIKAWA, Y ;
ISHIKAWA, M ;
OKAJIMA, M ;
HATAKOSHI, G .
APPLIED PHYSICS LETTERS, 1991, 59 (02) :149-151
[7]   HIGH-POWER (106 MW) CW OPERATION OF TRANSVERSE-MODE STABILIZED INGAAIP LASER-DIODES WITH STRAINED IN0.62GA0.38P ACTIVE LAYER [J].
NITTA, K ;
ITAYA, K ;
NISHIKAWA, Y ;
ISHIKAWA, M ;
OKAJIMA, M ;
HATAKOSHI, G .
ELECTRONICS LETTERS, 1991, 27 (18) :1660-1661
[8]   CONTINUOUS-WAVE HIGH-POWER (75 MW) OPERATION OF A TRANSVERSE-MODE STABILIZED WINDOW-STRUCTURE 680 NM AIGAINP VISIBLE LASER DIODE [J].
UENO, Y ;
ENDO, K ;
FUJII, H ;
KOBAYASHI, K ;
HARA, K ;
YUASA, T .
ELECTRONICS LETTERS, 1990, 26 (20) :1726-1728