LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN A CCL4 ATMOSPHERE - CONTROL OF CARBON DEPOSITION

被引：22

作者：

TOKUDA, J

TAKAI, M

NAKAI, H

GAMO, K

NAMBA, S

机构：

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1987年 / 4卷 / 02期

关键词：

D O I：

10.1364/JOSAB.4.000267

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：267 / 271

页数：5

共 8 条

[1]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[2] WAFER-SCALE LASER PANTOGRAPHY .3. FABRICATION OF NORMAL-METAL-OXIDE-SEMICONDUCTOR TRANSISTORS AND SMALL-SCALE INTEGRATED-CIRCUITS BY DIRECT-WRITE LASER-INDUCED PYROLYTIC REACTIONS [J].

MCWILLIAMS, BM ;

HERMAN, IP ;

MITLITSKY, F ;

HYDE, RA ;

WOOD, LL .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :946-948

[3] MASKLESS DRY ETCHING OF GALLIUM-ARSENIDE WITH A SUB-MICRON LINEWIDTH BY LASER PYROLYSIS IN CCL4 GAS ATMOSPHERE [J].

TAKAI, M ;

TSUCHIMOTO, J ;

NAKAI, H ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11) :L852-L854

[4] LOCAL TEMPERATURE RISE DURING LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN SICL4 ATMOSPHERE [J].

TAKAI, M ;

NAKAI, H ;

TSUCHIMOTO, J ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09) :L705-L708

[5] LASER-INDUCED LOCAL ETCHING OF GALLIUM-ARSENIDE IN GAS ATMOSPHERE [J].

TAKAI, M ;

TOKUDA, J ;

NAKAI, H ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L757-L759

[6] RESIDUAL LOCAL STRAIN IN GALLIUM-ARSENIDE INDUCED BY LASER PYROLYTIC ETCHING IN CCL4 ATMOSPHERE [J].

TAKAI, M ;

NAKAI, H ;

NAKASHIMA, S ;

MINAMISONO, T ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09) :L755-L757

[7] DIRECT-WRITE METALLIZATION OF SILICON MOSFETS USING LASER PHOTODEPOSITION [J].

TSAO, JY ;

EHRLICH, DJ ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

ELECTRON DEVICE LETTERS, 1982, 3 (06) :164-166

[8]

WEST RC, 1982, CRC HDB CHEM PHYSICS, pE209

← 1 →