AN SEU TOLERANT MEMORY CELL DERIVED FROM FUNDAMENTAL-STUDIES OF SEU MECHANISMS IN SRAM

被引：32

作者：

WEAVER, HT

AXNESS, CL

MCBRAYER, JD

BROWNING, JS

FU, JS

OCHOA, A

KOGA, R

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1281 / 1286

页数：6

共 13 条

[1]

AXNESS CL, 1987, 6 P NASECODE C DUBL

[2]

BRADLEY JM, 1986, IEEE T NUCL SCI, V33, P1651

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[4] MEMORY SEU SIMULATIONS USING 2-D TRANSPORT CALCULATIONS [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :422-424

[5] COMPARISON OF 2D MEMORY SEU TRANSPORT SIMULATION WITH EXPERIMENTS [J].

FU, JS ;

WEAVER, HT ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4145-4149

[6]

HSIEH C, 1983, IEEE T ELECTRON DEVI, V30, P67

[7] AN IMPROVED SINGLE EVENT RESISTIVE-HARDENING TECHNIQUE FOR CMOS STATIC RAMS [J].

JOHNSON, RL ;

DIEHL, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1730-1733

[8]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[9] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[10]

Mock M., 1983, ANAL MATH MODELS SEM

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