ELECTRONIC SURFACE-STATES ON CLEAVED GAP(110) - INITIAL STEPS OF THE OXYGEN-CHEMISORPTION

被引：25

作者：

GUICHAR, GM

SEBENNE, CA

THUAULT, CD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1212 / 1215

页数：4

共 13 条

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[3] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 831 - 837
[4] GUICHAR G, 1976, 13 P INT C PHYS SEM, P710
[5] STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES
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[J]. SURFACE SCIENCE, 1976, 58 (02) : 374 - 378
[6] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110)
GUICHAR, GM
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GARRY, GA
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1158 - 1161
[7] GUICHAR GM, 1978, THESIS U PIERRE MARI
[8] ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS
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VANROOY, TL
[J]. SURFACE SCIENCE, 1977, 62 (02) : 472 - 486
[9] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
IBACH, H
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LUTH, H
[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454
[10] SURFACE-STATES ON GALLIUM-PHOSPHIDE
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MCGOVERN, IT
NORRIS, C
[J]. PHYSICS LETTERS A, 1977, 63 (03) : 384 - 386