PLASMA-SURFACE AND GAS-SURFACE INTERACTIONS DURING THE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN FROM H2/WF6

被引：10

作者：

GREEN, WM ^{[1
]}

HESS, DW ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4696 / 4703

页数：8

共 46 条

[1] ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2
BENSAOULA, A
STROZIER, JA
IGNATIEV, A
YU, J
WOLFE, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1921 - 1924
[2] BLEWER RS, 1986, SOLID STATE TECHNOL, V29, P117
[3] AN ANALYTICAL FORMULA AND IMPORTANT PARAMETERS FOR LOW-ENERGY ION SPUTTERING
BOHDANSKY, J
ROTH, J
BAY, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2861 - 2865
[4] THEORY OF THIN-FILM ORIENTATION BY ION-BOMBARDMENT DURING DEPOSITION
BRADLEY, RM
HARPER, JME
SMITH, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4160 - 4164
[5] CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164
[6] ION-BOMBARDMENT EFFECTS IN PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS - A COMPARATIVE-STUDY OF DC AND RF DISCHARGES
CATHERINE, Y
ZAMOUCHE, A
BULLOT, J
GAUTHIER, M
[J]. THIN SOLID FILMS, 1983, 109 (02) : 145 - 158
[7] ION BOMBARDMENT-INDUCED MECHANICAL-STRESS IN PLASMA-ENHANCED DEPOSITED SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS
CLAASSEN, WAP
[J]. PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (01) : 109 - 124
[8] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION
CUOMO, JJ
HARPER, JME
GUARNIERI, CR
YEE, DS
ATTANASIO, LJ
ANGILELLO, J
WU, CT
HAMMOND, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354
[9] COMPOSITIONALLY MODULATED SPUTTERED INSB-GASB SUPER-LATTICES - CRYSTAL-GROWTH AND INTERLAYER DIFFUSION
ELTOUKHY, AH
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 505 - 517
[10] DIFFUSION ENHANCEMENT DUE TO LOW-ENERGY ION-BOMBARDMENT DURING SPUTTER ETCHING AND DEPOSITION
ELTOUKHY, AH
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4444 - 4452

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