INCORPORATION AND DESORPTION OF SULFUR IN INP GROWN BY MBE

被引：6

作者：

AIRAKSINEN, VM

CHENG, TS

STANLEY, CR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90413-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：332 / 337

页数：6

共 18 条

[1]

AIRAKSINEN VM, IN PRESS

[2]

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[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425

[4] THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

KONG, MY ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :841-845

[5] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[6] INDIUM-PHOSPHIDE VAPOR-PHASE EPITAXY - A REVIEW [J].

CLARKE, RC .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :88-100

[7] SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE [J].

COLLINS, DM ;

MILLER, JN ;

CHAI, YG ;

CHOW, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3010-3018

[8] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

ANDREWS, DA ;

HECKINGBOTTOM, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7214-7218

[9] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448

[10]

Heckingbottom R., 1985, Molecular Beam Epitaxy and Heterostructures. Proceedings of a NATO Advanced Study Institute, P71

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